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| FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11446-2E 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode MB82DBS16164A-80L FEATURES * * * * * * TM Pseudo SRAM with Single Data Rate (SDR) Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3 SDR Burst Mode Function Asynchronous Mode Capability _____ ______ * Byte Control by LB, UB Various Power Down Mode Sleep 32 Mbit Partial 64 Mbit Partial 128 Mbit Partial Shipping Form : Wafer and Chip MAIN SPECIFICATIONS Part Number Organization Supply Voltage Burst Data Transfer Interface Burst Frequency (Max.) Data Transfer Rate (Max.) CLK Access Time (Max.) Active Current (Max.) Standby Current (Max.) Power Down Current (Max.) Sleep RL=8, 7 MB82DBS16164A-80L 16 M WORD x 16 BIT 1.7 V to 1.95 V Single Data Rate (SDR) 100 MHz 200M byte / s 7 ns 40 mA 250 A 10 A Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright(c)2007 FUJITSU LIMITED All rights reserved |
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